Temperature Dependence of the Transport Properties of InN
نویسندگان
چکیده
In this work, we employ a Monte Carlo (MC) approach to investigate the temperature dependence of the electron transport in wurtzite InN. The velocity-field characteristics of this material show a pronounced negative differential resistance, which is a requirement for the realization of transferred-electron devices. Based on the Monte Carlo simulation results we derive a hydrodynamic mobility model suited for use in device simulation tools. As a particular example, we evaluate the performance of InN Gunn diodes using our twodimensional device simulator MINIMOS-NT.
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